HiPerFETTM
MOSFET
Q2-Class
(Electrically Isolated Back Surface)
IXFR 38N80Q2
VDSS ID25 RDS(on)
= = =
800 V 28 A 240 mΩ
trr ≤ 250 ns
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force 5 g Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 28 150 38 75 4.
0 20 416 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 V V V V A A A...