| Part Number | IXFX20N120P |
| Manufacturer | IXYS Corporation |
| Title | Power MOSFET |
| Description | PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR V... |
| Features |
Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Discharger Circuits in Lesers Pulsers, Spark ... |
| File Size | 2.01MB |
| Datasheet |
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IXFX20N120 : Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 20N120 IXFX 20N120 VDSS ID25 RDS(on) = 1200 V = 20 A = 0.75 Ω trr ≤ 300 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D D (TAB) S TO-264 AA (IXFK) G D S D (TAB) G = Gate S = Source D = Drain TA.