Part Number
|
IXGA4N100 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 27, 2007 |
Detailed Description
|
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Advanced Technical Information
IGBT
IXGA 4N100 IXGP 4N100
VCES = 1000 V IC25 = 8A VCE(sat) = 2.7...
|
Datasheet
|
IXGA4N100
|
Overview
com
Advanced Technical Information
IGBT
IXGA 4N100 IXGP 4N100
VCES = 1000 V IC25 = 8A VCE(sat) = 2.
7 V
Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 120 W Clamped inductive load TC = 25°C
Maximum Ratings 1000 1000 ± 20 ± 30 8 4 16 ICM = 8 @ 0.
8 VCES 40 -55 .
.
.
+150 150 -55 .
.
.
+150 300 W °C °C °C °C Features V V V V A A A A
G E C (TAB)
G CE
TO-220AB (IXGP)
TO-263 AA (IXGA)
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Md Weight Mounting torque with screw M3 Mou...
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