Part Number
|
IXGH22N50BU1 |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFAST IGBT |
Published
|
Dec 12, 2008 |
Detailed Description
|
Preliminary data
HiP erF AST HiPerF erFAST with Diode
Combi P ac k Pac ack
TM
IGBT
IXGH22N50B U1 IXGH22N50BU1 IXGH22...
|
Datasheet
|
IXGH22N50BU1
|
Overview
Preliminary data
HiP erF AST HiPerF erFAST with Diode
Combi P ac k Pac ack
TM
IGBT
IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S
VCES IC(25) VCE(sat)typ tfi(typ)
TO-247 SMD*
= 500 V = 44 A = 2.
1 V = 55 ns
com
Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 500 500 ±20 ±30 44 22 88 ICM = 44 @ 0.
8 VCES 150 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A A W °C °C °C °C TO-247 AD
G E C (TAB)
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
C (TAB) G C E C = Collector, T...
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