Part Number
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IXGH24N60BU1 |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFAST IGBT |
Published
|
Dec 12, 2008 |
Detailed Description
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HiPerFASTTM IGBT with Diode
IXGH 24N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 48 A = 2.3 V = 80 ns
Symbol
www.DataSheet...
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Datasheet
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IXGH24N60BU1
|
Overview
HiPerFASTTM IGBT with Diode
IXGH 24N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 48 A = 2.
3 V = 80 ns
Symbol
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.
8 VCES 150 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A A W °C °C °C °C Features
G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB)
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
TO-247 AD
• High frequency IGBT and antiparallel • High current handling capability • 3rd generati...
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