Part Number
|
IXGR60N60U1 |
Manufacturer
|
IXYS Corporation |
Description
|
LowV-CE(sat) IGBT |
Published
|
Aug 6, 2007 |
Detailed Description
|
www.DataSheet4U.com
Low VCE(sat) IGBT with Diode
ISOPLUS247TM
IXGR 60N60U1
VCES IC25 VCE(sat)
= = =
600 V 75 A 1.7 ...
|
Datasheet
|
IXGR60N60U1
|
Overview
www.
DataSheet4U.
com
Low VCE(sat) IGBT with Diode
ISOPLUS247TM
IXGR 60N60U1
VCES IC25 VCE(sat)
= = =
600 V 75 A 1.
7 V
(Electrically Isolated Back Surface)
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC100 ICM
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 300 -55 .
.
+ 150 150 -55.
.
.
+ 150 V V V V A A A A W °C °C °C °C V g
ISOPLUS247TM
G
C
E
Isolated back surface* G = Gate, E = Emitter, * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collec...
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