Part Number
|
IXGT28N60BD1 |
Manufacturer
|
IXYS Corporation |
Description
|
Low VCE(sat) IGBT with Diode |
Published
|
Apr 5, 2005 |
Detailed Description
|
Low VCE(sat) IGBT with Diode
IXGH 28N60BD1 IXGT 28N60BD1
VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V
Preliminary data
S...
|
Datasheet
|
IXGT28N60BD1
|
Overview
Low VCE(sat) IGBT with Diode
IXGH 28N60BD1 IXGT 28N60BD1
VCES = 600 V = 40 A IC25 VCE(sat) = 2.
0 V
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.
8 VCES 150 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C g g Features • International standard packages • IGBT ...
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