DatasheetsPDF.com

IXGT32N90B2D1

Part Number IXGT32N90B2D1
Manufacturer IXYS
Description IGBT
Published Oct 28, 2015
Detailed Description Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N...
Datasheet IXGT32N90B2D1





Overview
Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.
7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL 600V PC TC = 25°C TJ TJM Tstg Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Md Weight Mounting torque (TO-247) Maximum Ratings 900 V 900 V ±20 V ±30 V 64 A 32 A 200 A ICM = 64 A 300 -55 .
.
.
+150 150 -55...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)