Advanced Technical Information
IXKC 19N60C5
CoolMOS™ 1) Power
MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS
MOSFET Ultra low gate charge
D
G S
ID25
= 19 A
VDSS
= 600 V
RDS(on) max = 0.
125 Ω
ISOPLUS220TM
G D S
E72873
q
isolated back
surface
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 11 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V
Maximum Ratings
600 V
± 20
V
19 A 15 A
708 mJ 1.
2 mJ
50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unl...