isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.
5Ω@VGS=10V ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
500
VGS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
30
PD
Total Dissipation @TC=25℃
200
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL...