Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power
MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5.
0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA.
.
7)
75 V 75 V
± 20
200 120 540
25 500
3
V
A A A
A mJ
V/ns
1
7
Pin-out:1 - Gate 2, 3 - Source 4 ...