Part Number
|
IXTH13N80 |
Manufacturer
|
IXYS |
Description
|
MegaMOS FET |
Published
|
Nov 1, 2015 |
Detailed Description
|
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0...
|
Datasheet
|
IXTH13N80
|
Overview
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0.
95 Ω 0.
80 Ω
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM I
D25
IDM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
T C
= 25°C
TC = 25°C, pulse width limited by TJM
11N80 13N80 11N80 13N80
800 V
800 V
±20 V ±30 V
11 A 13 A 44 A 52 A
PD TJ TJM Tstg Md Weight
TC = 25°C Mounting torque
300 W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s
300 °C
TO-247 AD (IXTH) D (TAB)
TO-204 AA (IXTM)
G = Gate, S = Source,
...
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