isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Current Regulators ·Solid State Circuit Breakers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
500
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous
24
A
IDM
Drain Current-Single Pulsed
50
A
PD
Total Dissipation @TC=25℃
400
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
...