isc N-Channel
MOSFET Transistor
·FEATURES ·Drain Source
Voltage-
: VDSS= 300V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 88mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
300
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Plused
160
A
PD
Total Dissipation @TC=25℃
300
W
Tj
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage T...