isc N-Channel
MOSFET Transistor
IXTP110N055P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤13.
5mΩ ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
55
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
110
IDM
Drain Current-Single Pulsed
250
PD
Total Dissipation @TC=25℃
330
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
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