isc N-Channel
MOSFET Transistor
IXTP130N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 9.
1mΩ@VGS=10V ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
100
VGS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
130
IDM
Drain Current-Single Pulsed
350
PD
Total Dissipation @TC=25℃
360
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERIS...