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IXTQ96N25T

Part Number IXTQ96N25T
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH96N25T IXTQ96...
Datasheet IXTQ96N25T





Overview
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH96N25T IXTQ96N25T IXTV96N25T VDSS = ID25 = RDS(on) ≤ 250V 96A 29mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 96 A 75 A 250 A 5 A 2 J 625 W -55 .
.
.
+150 °C ...






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