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High
Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N80 IXTY 01N80
VDSS ID25
RDS(on)
= 800 V = 100mA = 50 Ω
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings 01N100 800 800 ±20 ±30 100 400 25 -55 .
.
.
+150 150 -55 .
.
.
+150 V V
TO-251 AA
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by max.
TJ TC = 25°C
G
V V mA mA W °C °C °C °C g
D S
D (TAB)
TO-252 AA
1.
6 mm (0.
063 in) from case for 5 s
300 0.
8
G S
D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain
Features Symbol Test Conditions Characteristic Valu...