Part Number
|
IXYB82N120C3H1 |
Manufacturer
|
IXYS Corporation |
Description
|
High-Speed IGBT |
Published
|
Jun 1, 2014 |
Detailed Description
|
1200V XPT TM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
IXYB82N120C3H1
VCES IC110 VCE(sat) tfi(typ)...
|
Datasheet
|
IXYB82N120C3H1
|
Overview
1200V XPT TM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
IXYB82N120C3H1
VCES IC110 VCE(sat) tfi(typ)
PLUS264TM
= = ≤ =
1200V 82A 3.
2V 93ns
Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 164 1 60 82 42 320 41 800 ICM = 164 @VCE ≤ VCES 1040 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A A A mJ A W °C °C °C °C °C N/lb.
g
G C E ...
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