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2SJ681
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
Relay Drive, DC−DC Converter and Motor Drive Applications
6.5±0.2 5.2±0.2 1.5±0.2
Unit: mm
0.6 MAX.
z High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
1.6
z Low drain−source ON resistance: RDS (ON) = 0.
12 Ω (typ.
)
0.9
5.5±0.2
z 4-V gate drive
1.1±0.2
4.1±0.2
5.7
0.6 MAX
2.3
2.3 2.3±0.2 0.6±0.15 0.6±0.15
1
2
3
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source
voltage Drain−gate
voltage (RGS = 20 kΩ) Gate−source voltag...