JANSR2N7398
Formerly FSL430R4
June 1998
2A, 500V, 2.
50 Ohm, Rad Hard, N-Channel Power
MOSFET
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened
MOSFETs specifically designed for commercial and military space applications.
Enhanced Power
MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channe...