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JANSR2N7411

Part Number JANSR2N7411
Manufacturer Intersil Corporation
Description 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
Published Apr 7, 2005
Detailed Description JANSR2N7411 Formerly FSL9110R4 June 1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Description The Discre...
Datasheet JANSR2N7411




Overview
JANSR2N7411 Formerly FSL9110R4 June 1998 2.
5A, -100V, 1.
30 Ohm, Rad Hard, P-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Cha...






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