JDV2S07S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S07S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 2.
3 (typ.
) Low Series Resistance : rs = 0.
42 Ω (typ.
) This device is suitable for use in a small-size tuner.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse
voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1K1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse
voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Con...