TK11A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK11A60D
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.
54 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 6.
0 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source
voltage
Gate-source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V...