2SK1336
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
D 321 1.
Source
G 2.
Drain 3.
Gate
S
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch Tch Tstg
Ratings 60 ±20 0.
3 1.
2 0.
3 400 150 –55 to +1...