2SK1341
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G1
2 3 1.
Gate 2.
Drain (Flange)
S 3.
Source
2SK1341
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 900 ±30 6 15 6 100 150 –55 to +150
Unit V V A A A W °C...