TK13A65U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK13A65U
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.
32 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 8.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source
voltage
Gate-source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
...