TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK15A60U
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.
24 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 8.
5 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Gate-source
voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 15 30 40 81 15 4 150 -55 to 150 Unit V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2)...