SKW15N120
com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SKW15N120 Maximum Ratings Parameter Collector-emitter
voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp lim...