2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes
Outline
TO-3P
D G1
2 3 1.
Gate 2.
Source (Flange)
S 3.
Drain
2SK2220, 2SK2221
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source
voltage
2SK2220
2SK2221
Gate to source
voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note 1.
Value at Tc = 25 °C
Symbol VDSX
VGSS ID I DR Pch*...