Ordering number:EN659K
N-Channel Junction Silicon FET
2SK223
High
Voltage Driver Applications
Features
· Ultrahigh withstand
voltage (VGDS≥–80V).
· Due to low gate leakage currents even at high
voltage, the 2SK223 is suitable for a wide range of
application (IGDL=1nA/VDS=50V, ID=1mA).
· High yfs(yfs=20mS/VDS=30V, f=1kHz).
Package Dimensions
unit:mm
2019B
[2SK223]
5.
0 4.
0
4.
0
0.
6 2.
0 14.
0 5.
0
0.
45 0.
5
0.
45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Drain
Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGDS
IG PD Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.
3
Cond...