Power F-MOS FETs
2SK758
2SK2324(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
4.
6±0.
2 ø3.
2±0.
1 9.
9±0.
3 2.
9±0.
2
energy capability guaranteed switching
q High-speed q Low q No
ON-resistance
15.
0±0.
3 4.
1±0.
2 8.
0±0.
2 Solder Dip 3.
0±0.
2
secondary breakdown
s Applications
q Non-contact q Solenoid q Motor
relay
13.
7 -0.
2
+0.
5
1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4
2.
6±0.
1 0.
7±0.
1
drive
drive equipment mode regulator
7˚
q Control
q Switching
1 2 3
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown
voltage Gate-Source
voltage Drain current DC Pulse TC= 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 600 ±30 ±2 ±4...