2SK2350
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2350
Switching Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON-resistance
: RDS (ON) = 0.
26 Ω (typ.
)
z High forward transfer admittance
: |Yfs| = 8 S (typ.
)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode
: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source
voltage
Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)...