2SK2398
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2398
DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.
)
l High forward transfer admittance : |Yfs| = 27 S (typ.
)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
l Enhancement−mode
: Vth = 1.
5~3.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source
voltage
Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
...