Power F-MOS FETs
2SK3023 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-
voltage drive q High electrostatic breakdown
voltage
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown
voltage VDSS 60 V
Gate to Source
voltage
VGSS
±20
V
Drain current
DC Pulse
ID IDP
±10 A ±20 A
Avalanche energy capacity
EAS*
5
mJ
Allowable power dissipation
TC = 25°C Ta = 25°C PD
10 W
1
Ch...