2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) • High forward transfer admittance: |Yfs| = 4.
3 S (typ.
) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement model: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source
voltage
Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperat...