2SK3869
com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3869
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.
55 Ω (typ.
) • High forward transfer admittance: |Yfs| = 5.
5 S (typ.
) • Low leakage current: IDSS = 100 μA (VDS = 450 V) • Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source
voltage
Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avala...