2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.
0 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 7.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source
voltage
Drain-gate
voltage (RGS = 20 kΩ)
Gate-source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Cha...