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2SK3934
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI)
2SK3934
Switching Regulator Applications
• • • • Low drain-source ON resistance: R DS (ON) = 0.
23Ħ (typ.
) High forward transfer admittance: |Yfs| =8.
2 S (typ.
) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.
0~4.
0 V (V DS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ ) Gate-source
voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 500 500 ±30 15 A 60 50 1.
08 15 5.
0 150 -55~150 W J A mJ °C °C
1: Gate 2: Drain 3...