K4S641632E
CMOS SDRAM
64Mbit SDRAM
1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.
2 Sept.
2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
2 Sept.
2001
K4S641632E
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle)
C...