IKW50N65EH5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
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HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdown
voltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.
infineon.
com/igbt/
G E
Applications:...