TK5A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK5A60D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.
2 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 3.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
Ф3.
2 ± 0.
2 10 ± 0.
3 A 3.
9 3.
0
Unit: mm
2.
7 ± 0.
2
1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Gate-source
voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 5 20 35 189 5 3.
5 150 −55 to 150 A W mJ A mJ °C °C Unit V V
0.
...