Part Number
|
K7R161884B |
Manufacturer
|
Samsung semiconductor |
Description
|
512Kx36 & 1Mx18 QDR II b4 SRAM |
Published
|
Apr 7, 2005 |
Detailed Description
|
K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision...
|
Datasheet
|
K7R161884B
|
Overview
K7R163684B K7R161884B
Document Title
512Kx36 & 1Mx18 QDRTM II b4 SRAM
512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM
Revision History
Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Change the Boundary scan exit order.
2.
Correct the Overshoot and Undershoot timing diagram.
1.
Change JTAG Block diagram 1.
Add the speed bin (-25) 1.
Correct the JTAG ID register definition 2.
Correct the AC timing parameter (delete the tKHKH Max value) 1.
Change the Maximum Clock cycle time.
2.
Correct the 165FBGA package ball size.
1.
Add the power up/down sequencing comment.
2.
Update the DC current parameter (Icc and Isb).
3.
Change the Max.
speed bin from -33 to -30.
1.
Change the ISB1.
Speed Bin -30 -25 -20 -...
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