Part Number
|
K9F1208D0B |
Manufacturer
|
Samsung semiconductor |
Description
|
64M x 8 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision Histo...
|
Datasheet
|
K9F1208D0B
|
Overview
K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No.
History
0.
0 0.
1 Initial issue.
1.
Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2.
NAND Flash Technical Notes is changed.
-Invalid block - initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program Flow Chart ( page 17 ) 3.
Vcc range is changed -2.
4V~2.
9V - 2.
5V~2.
9V -1.
7V~1.
95V -1.
65V~1.
95V 4.
Multi plane operation and Copy-Back Program are not supported with 1.
8V
device.
Draft Date
Apr.
24th 2004 Oct.
11th.
2004
Remark
Advance Preliminary
Note : For more detailed features and specifications including FAQ, pl...
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