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Part Number
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K9F1G08Q0A |
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Manufacturer
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Samsung semiconductor |
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Description
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FLASH MEMORY |
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Published
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Apr 7, 2005 |
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Detailed Description
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com
K9F1G08Q0A K9F1G08U0A
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision Histor...
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Datasheet
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K9F1G08Q0A
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Overview
com
K9F1G08Q0A K9F1G08U0A
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.
0 0.
1
History
1.
Initial issue 1.
The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation.
2.
Added Addressing method for program operation
Draft Date
Aug.
24.
2003 Jan.
27.
2004
Remark
Advance Preliminary
0.
2 0.
3
1.
Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1.
PKG(TSOP1, WSOP1) Dimension Change
Apr.
23.
2004 May.
19.
2004
Preliminary
The attached data sheets are prepared and approve...
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