Part Number
|
K9F1G16D0M |
Manufacturer
|
Samsung semiconductor |
Description
|
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Document Title 128M x 8 Bit / 64M ...
|
Datasheet
|
K9F1G16D0M
|
Overview
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
0.
0 1.
Initial issue
Draft Date
July.
5.
2001
Remark
Advance
0.
1 1.
Iol(R/B) of 1.
8V is changed.
- min.
value : 7mA -- 3mA - Typ.
value : 8mA -- 4mA
Nov.
5.
2001
2.
AC parameter is changed.
tRP(min.
) : 30ns -- 25ns
3.
A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
--- A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
Dec.
4.
2001...
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