Part Number
|
K9F2G16Q0M |
Manufacturer
|
Samsung semiconductor |
Description
|
FLASH MEMORY |
Published
|
Apr 7, 2005 |
Detailed Description
|
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M
Preliminary FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND ...
|
Datasheet
|
K9F2G16Q0M
|
Overview
K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M
Preliminary FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.
0 0.
1
History
1.
Initial issue 1.
Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.
8V device (Page 34) 2.
Add the data protection Vcc guidence for 1.
8V device - below about 1.
1V.
(Page 35)
Draft Date
Sep.
19.
2001 Nov.
22.
2002
Remark
Advance Preliminary
0.
2
The min.
Vcc value 1.
8V devices is changed.
K9F2GXXQ0M : Vcc 1.
65V~1.
95V -- 1.
70V~1.
95V
Mar.
6.
2003
Preliminary
0.
3
Few current value is changed.
Before K9F2GXXQ0M Typ.
ISB2 ILI ILO After K9F2GXXQ0M Typ.
ISB2 ILI ILO 10 Max.
50 ±10 ±10 20 Max.
100 ±20 ±20
Apr.
2.
2003 ...
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