Part Number
|
K9K1G08U0M-YCB0 |
Manufacturer
|
Samsung semiconductor |
Description
|
128M x 8 Bit NAND Flash Memory |
Published
|
Apr 7, 2005 |
Detailed Description
|
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
Document Title 128M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1 0.2
...
|
Datasheet
|
K9K1G08U0M-YCB0
|
Overview
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
Document Title 128M x 8 Bit NAND Flash Memory Revision History
Revision No
0.
0 0.
1 0.
2
FLASH MEMORY
History
1.
Initial issue 1.
[Page 31] device code (76h) -- device code (79h) 1.
Powerup sequence is added : Recovery time of minimum 1 µs is required before internal circuit gets ready for any command sequences
Draft Date
Apr.
7th 2001 Jul.
3rd 2001
Remark
Jul.
23th 2001
2.
5V VCC High
≈
2.
5V
W P
W E
2.
AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3.
[Page28] Only address A 14 to A 25 is valid while A9 to A 13 is ignored -- Only address A 14 to A 26 is valid while A 9 to A 13 is ignored 0.
3 (page 30) Sep.
13th 2001 A14 and A15 must be the sa...
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