N-channel
MOSFET
Features
500V,20A RDS(on)=0.
21Ω @VGS=10V,ID=10A High speed switching High ruggedness 100% avalanche tested Improved dv/dt capability
General Description
KDF20N50 is well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS VGS ID IDM EAS
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current(TC=25℃ ) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2)
dV/dt
Peak Diode Recovery dv/dt(Note 3)
Maximum Power Dissipation ( TC=25 ℃ ) PD Maximum Power Dissipation ( TC=100 ℃)
TJ Operating Junction Temperature Range
TSTG
St...