SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small package : TFSV. Low forward voltage. Fast reverse recovery time. Small total capacitance. C KDS166F SILICON EPITAXIAL PLANAR DIODE B B1 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRM VR IFM IO IFSM PD * Tj Tstg 1.5 RATING 85 80 300 100 2 100 150 -55 150 UNIT V H Maxim...
KEC